TC Wafer 晶圓測溫片

TC Wafer 晶圓測溫片型錄型錄

半導體製程表面溫度量測

TC Wafer(Thermocouple Wafer)是一種專為半導體製程設計的晶圓式溫度感測器,將熱電偶感測元件精密固定於晶圓表面,可於製程中即時量測各位置的實際溫度,協助設備校正、製程驗證及均溫性分析。

廣泛應用於 RTP、CVD、PVD、Etching、Photolithography、Hot Plate、Reflow、Oven 等高精度溫控設備,可有效掌握晶圓表面溫度分布,提高製程穩定性與產品良率。

報價申請單

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產品介紹

TC Wafer

TC Wafer

TCW-K・±1.1 °C / 0.4%
TC Panel

TC Panel

TCP・±1.1 °C / 0.4%
RTD Wafer

RTD Wafer

RTD Wafe・±0.05 °C
On Wafer

On Wafer

On Wafe・±0.1 °C
HRTD Wafer

HRTD Wafer

HRTD Wafe・±1 °C

產品規格

Parameter Unit / basis TC Wafer TC Panel RTD Wafer onwafer HRTD Wafer
Product name / model TCW-K TCP RTDWafer onwafer HRTD Wafer
Accuracy ± °C 1.1°C / 0.4% ±1.1 °C 0.05 0.1 1
Resolution °C 0.1 0.1 0.001 0.01 0.1
Sensor to sensor < °C 0.2 0.2 0.03 0.1 0.6
Sensor type Type-K Type-K RTD IC RTD
Standard points num 1-5-9-13-17-21 10-17 1-5-9-13-17-21 53-65 9-13-17-21
Power External External External Battery Battery
Notes Commercial Commercial Wired wafer Wireless wafer, plasma compatible Wireless wafer, plasma incompatible
Max sampling rate Hz 1 - 10 Hz 1 - 10 Hz 1 - 10 Hz 1 - 2 Hz 1 - 2 Hz
Operating range Min - max °C 0 °C - 1100 °C 0 °C - 400 °C 0 °C - 250 °C -40 °C - 130 °C 0 °C - 400 °C
Calibration range Min - max °C NA NA RT - 240 °C -20 °C - 110 °C RT - 350 °C
Substrate Silicon / silicon carbide / sapphire Silicon / glass Silicon Silicon Silicon
Wafer size mm 25 - 300 25 - 300 150 - 300 150 - 300 200 - 300
Wire diameter mm 0.127 0.127 FPC NA NA
Product weight g NA NA NA 12 inch - 190 g / 8 inch - 120 g 12 inch - 200 g / 8 inch - 130 g
Top coating NA NA NA Yttrium oxide / others NA
Power system external PSU external PSU external PSU Wireless charging Wireless charging
Communication mini plug mini plug D-SUB bluetooth bluetooth
Thickness mm above NA NA NA 1.16 8
Charge time min NA NA NA 30 30
Record time min Unlimited Unlimited Unlimited 80 (RT) 80 (RT)
Operation hours hours NA NA NA 6 h 6 h
Certify interval period months NA NA 12 12 12

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